MOSFET P-CH 40V 3.4A 8SO IRF5803D2TRPBF
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Description:
MOSFET P-CH 40V 3.4A 8SO
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF5803D2TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90612,Price reference "real-time change" China/Hongkong。 IRF5803D2TRPBF package/specs, Download IRF5803D2TRPBF、Datasheet。