BSS209PW L6327 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

BSS209PW L6327

Description:

MOSFET P-CH 20V 580MA SOT323-3

Stock:

74261

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

580mA(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,4.5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

1.38 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

89.9 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

550 mΩ @ 580mA,4.5V

Power dissipation (maximum)

300mW(Ta)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

1.2V @ 3.5µA

packing

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-SOT323

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载BSS209PW L6327.pdf

BSS209PW L6327（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74261,Price reference "real-time change" China/Hongkong。 BSS209PW L6327 package/specs, Download BSS209PW L6327、Datasheet。