MOSFET N-CH 100V 27A TO252-3 IPD33CN10NGBUMA1
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Description:
MOSFET N-CH 100V 27A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD33CN10NGBUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory16253,Price reference "real-time change" China/Hongkong。 IPD33CN10NGBUMA1 package/specs, Download IPD33CN10NGBUMA1、Datasheet。