MOSFET N-CH 100V 20A TO252-3 IPD49CN10N G
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Description:
MOSFET N-CH 100V 20A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD49CN10N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory78111,Price reference "real-time change" China/Hongkong。 IPD49CN10N G package/specs, Download IPD49CN10N G、Datasheet。