MOSFET N-CH 80V 70A TO262-3 IPI100N08N3GHKSA1
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Description:
MOSFET N-CH 80V 70A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI100N08N3GHKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory8927,Price reference "real-time change" China/Hongkong。 IPI100N08N3GHKSA1 package/specs, Download IPI100N08N3GHKSA1、Datasheet。