MOSFET N-CH 650V 20.2A TO220 IPA65R190C6XKSA1
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Description:
MOSFET N-CH 650V 20.2A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPA65R190C6XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory34615,Price reference "real-time change" China/Hongkong。 IPA65R190C6XKSA1 package/specs, Download IPA65R190C6XKSA1、Datasheet。