MOSFET N-CH 40V 100A TO262-3 IPI100N04S4H2AKSA1
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Description:
MOSFET N-CH 40V 100A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI100N04S4H2AKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76170,Price reference "real-time change" China/Hongkong。 IPI100N04S4H2AKSA1 package/specs, Download IPI100N04S4H2AKSA1、Datasheet。