MOSFET N-CH 500V 12A TO262-3 IPI50R299CPXKSA1
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Description:
MOSFET N-CH 500V 12A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI50R299CPXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42352,Price reference "real-time change" China/Hongkong。 IPI50R299CPXKSA1 package/specs, Download IPI50R299CPXKSA1、Datasheet。