IPP65R660CFDXKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPP65R660CFDXKSA1

Description:

MOSFET N-CH 650V 6A TO220-3

Stock:

42943

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.1

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Parameters

Current at 25 ° C - continuous drain (Id)

6A(Tc)

Drain source voltage (Vdss)

650 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

22 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

615 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

660 mΩ @ 2.1A,10V

Power dissipation (maximum)

62.5W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4.5V @ 200µA

packing

pipe

series

CoolMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO220-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

IPP65R660CFDXKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42943,Price reference "real-time change" China/Hongkong。 IPP65R660CFDXKSA1 package/specs, Download IPP65R660CFDXKSA1、Datasheet。