MOSFET N-CH 650V 6A TO252-3 IPD65R660CFDBTMA1
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Description:
MOSFET N-CH 650V 6A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD65R660CFDBTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90391,Price reference "real-time change" China/Hongkong。 IPD65R660CFDBTMA1 package/specs, Download IPD65R660CFDBTMA1、Datasheet。