MOSFET N-CH 40V 50A D2PAK IPB093N04LGATMA1
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Description:
MOSFET N-CH 40V 50A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB093N04LGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87533,Price reference "real-time change" China/Hongkong。 IPB093N04LGATMA1 package/specs, Download IPB093N04LGATMA1、Datasheet。