MOSFET N-CH 60V 28A TO252-3 IPD250N06N3GBTMA1
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Description:
MOSFET N-CH 60V 28A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD250N06N3GBTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62112,Price reference "real-time change" China/Hongkong。 IPD250N06N3GBTMA1 package/specs, Download IPD250N06N3GBTMA1、Datasheet。