MOSFET N-CH 650V 10.6A TO252-3 IPD65R380E6BTMA1
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Description:
MOSFET N-CH 650V 10.6A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD65R380E6BTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory95833,Price reference "real-time change" China/Hongkong。 IPD65R380E6BTMA1 package/specs, Download IPD65R380E6BTMA1、Datasheet。