MOSFET N-CH 560V 16A TO220-3 SPP16N50C3XKSA1
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Description:
MOSFET N-CH 560V 16A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP16N50C3XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29175,Price reference "real-time change" China/Hongkong。 SPP16N50C3XKSA1 package/specs, Download SPP16N50C3XKSA1、Datasheet。