MOSFET N-CH 650V 3.1A TO251 IPS65R1K5CEAKMA1
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Description:
MOSFET N-CH 650V 3.1A TO251
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS65R1K5CEAKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46546,Price reference "real-time change" China/Hongkong。 IPS65R1K5CEAKMA1 package/specs, Download IPS65R1K5CEAKMA1、Datasheet。