MOSFET N-CH 500V 14.1A TO252-3 IPD50R380CEATMA1
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Description:
MOSFET N-CH 500V 14.1A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD50R380CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96194,Price reference "real-time change" China/Hongkong。 IPD50R380CEATMA1 package/specs, Download IPD50R380CEATMA1、Datasheet。