MOSFET N-CH 550V 12A TO220-3 IPP50R299CPHKSA1
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Description:
MOSFET N-CH 550V 12A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP50R299CPHKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12169,Price reference "real-time change" China/Hongkong。 IPP50R299CPHKSA1 package/specs, Download IPP50R299CPHKSA1、Datasheet。