MOSFET N-CH 80V 160A TO263-7 IPB160N08S403ATMA1
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Description:
MOSFET N-CH 80V 160A TO263-7
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
DataSheet
IPB160N08S403ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51622,Price reference "real-time change" China/Hongkong。 IPB160N08S403ATMA1 package/specs, Download IPB160N08S403ATMA1、Datasheet。