MOSFET N-CH 600V 2.3A THIN-PAK IPL60R2K1C6SATMA1
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Description:
MOSFET N-CH 600V 2.3A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL60R2K1C6SATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory5478,Price reference "real-time change" China/Hongkong。 IPL60R2K1C6SATMA1 package/specs, Download IPL60R2K1C6SATMA1、Datasheet。