MOSFET N-CH 650V 20.2A 4VSON IPL65R190E6AUMA1
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Description:
MOSFET N-CH 650V 20.2A 4VSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL65R190E6AUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory79255,Price reference "real-time change" China/Hongkong。 IPL65R190E6AUMA1 package/specs, Download IPL65R190E6AUMA1、Datasheet。