MOSFET N-CH 650V 8.3A THIN-PAK IPL65R460CFDAUMA1
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Description:
MOSFET N-CH 650V 8.3A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL65R460CFDAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1462,Price reference "real-time change" China/Hongkong。 IPL65R460CFDAUMA1 package/specs, Download IPL65R460CFDAUMA1、Datasheet。