MOSFET N-CH 650V 7A THIN-PAK IPL65R660E6AUMA1
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Description:
MOSFET N-CH 650V 7A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL65R660E6AUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93257,Price reference "real-time change" China/Hongkong。 IPL65R660E6AUMA1 package/specs, Download IPL65R660E6AUMA1、Datasheet。