MOSFET N-CH 60V 120A TO262-3 IPI120N06S4H1AKSA2
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Description:
MOSFET N-CH 60V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, OptiMOS™
DataSheet
IPI120N06S4H1AKSA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56973,Price reference "real-time change" China/Hongkong。 IPI120N06S4H1AKSA2 package/specs, Download IPI120N06S4H1AKSA2、Datasheet。