MOSFET N-CH 100V 69A TO220-3 IPP12CN10LGHKSA1
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Description:
MOSFET N-CH 100V 69A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP12CN10LGHKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49145,Price reference "real-time change" China/Hongkong。 IPP12CN10LGHKSA1 package/specs, Download IPP12CN10LGHKSA1、Datasheet。