MOSFET N-CH 600V 10.6A TO252-3 IPD60R380E6ATMA2
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Description:
MOSFET N-CH 600V 10.6A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD60R380E6ATMA2(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory62497,Price reference "real-time change" China/Hongkong。 IPD60R380E6ATMA2 package/specs, Download IPD60R380E6ATMA2、Datasheet。