MOSFET N-CH 1TO251-3 IPS70N10S3L-12
The pictures are for reference only
Description:
MOSFET N-CH 1TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS70N10S3L-12(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90184,Price reference "real-time change" China/Hongkong。 IPS70N10S3L-12 package/specs, Download IPS70N10S3L-12、Datasheet。