MOSFET N-CH 800V 4A TO220-3 SPP04N80C3XK
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Description:
MOSFET N-CH 800V 4A TO220-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP04N80C3XK(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory59937,Price reference "real-time change" China/Hongkong。 SPP04N80C3XK package/specs, Download SPP04N80C3XK、Datasheet。