MOSFET P-CH 60V 100A TO263-3 IPB06P001LATMA1
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Description:
MOSFET P-CH 60V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB06P001LATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory77611,Price reference "real-time change" China/Hongkong。 IPB06P001LATMA1 package/specs, Download IPB06P001LATMA1、Datasheet。