MOSFET P-CH SOT223-3 ISP06P005NSATMA1
The pictures are for reference only
Description:
MOSFET P-CH SOT223-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
ISP06P005NSATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory75652,Price reference "real-time change" China/Hongkong。 ISP06P005NSATMA1 package/specs, Download ISP06P005NSATMA1、Datasheet。