MOSFET N-CH HI POWER DIE SIPC69N60CFDX1SA5
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Description:
MOSFET N-CH HI POWER DIE
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SIPC69N60CFDX1SA5(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory96874,Price reference "real-time change" China/Hongkong。 SIPC69N60CFDX1SA5 package/specs, Download SIPC69N60CFDX1SA5、Datasheet。