MOSFET N-CH HI POWER WAFER IPC60R037P7X7SA1
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Description:
MOSFET N-CH HI POWER WAFER
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPC60R037P7X7SA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80111,Price reference "real-time change" China/Hongkong。 IPC60R037P7X7SA1 package/specs, Download IPC60R037P7X7SA1、Datasheet。