MOSFET N-CH HI POWER WAFER IPC60R070CFD7X7SA1
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Description:
MOSFET N-CH HI POWER WAFER
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPC60R070CFD7X7SA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory87543,Price reference "real-time change" China/Hongkong。 IPC60R070CFD7X7SA1 package/specs, Download IPC60R070CFD7X7SA1、Datasheet。