MOSFET N-CH HI POWER WAFER IPC50R045CPX2SA1
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Description:
MOSFET N-CH HI POWER WAFER
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPC50R045CPX2SA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory42316,Price reference "real-time change" China/Hongkong。 IPC50R045CPX2SA1 package/specs, Download IPC50R045CPX2SA1、Datasheet。