MOSFET N-CH 40V TO263 IPI80N04S403BAKSA1
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Description:
MOSFET N-CH 40V TO263
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI80N04S403BAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18159,Price reference "real-time change" China/Hongkong。 IPI80N04S403BAKSA1 package/specs, Download IPI80N04S403BAKSA1、Datasheet。