BSC0303LSATMA1 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ BSC0303LSATMA1

The pictures are for reference only

Brand:

Infineon

Model:

BSC0303LSATMA1

Description:

TRENCH >=100V PG-TDSON-8

Stock:

17409

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

68A(Tc)

Drain source voltage (Vdss)

120 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

51 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

4900 pF @ 60 V

On resistance (maximum) for different Ids and Vgs

12 mΩ @ 34A,10V

Power dissipation (maximum)

114W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2.4V @ 72µA

packing

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TDSON-8

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载BSC0303LSATMA1.pdf

BSC0303LSATMA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory17409,Price reference "real-time change" China/Hongkong。 BSC0303LSATMA1 package/specs, Download BSC0303LSATMA1、Datasheet。