MOSFET N-CH 60V 90A TO252-3 IPD048N06L3GATMA1
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Description:
MOSFET N-CH 60V 90A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD048N06L3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory40685,Price reference "real-time change" China/Hongkong。 IPD048N06L3GATMA1 package/specs, Download IPD048N06L3GATMA1、Datasheet。