IPA60R650CEE8210XKSA1 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPA60R650CEE8210XKSA1

Description:

MOSFET

Stock:

1538

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

9.9A(Tc)

Drain source voltage (Vdss)

600 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

20.5 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

440 pF @ 100 V

On resistance (maximum) for different Ids and Vgs

650 mΩ @ 2.4A,10V

Power dissipation (maximum)

28W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3.5V @ 200µA

packing

bulk

series

CoolMOS™

technology

MOSFET(Metal oxide)

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

PG-TO220 Whole package

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

Final sale

DataSheet

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IPA60R650CEE8210XKSA1（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory1538,Price reference "real-time change" China/Hongkong。 IPA60R650CEE8210XKSA1 package/specs, Download IPA60R650CEE8210XKSA1、Datasheet。