MT41K512M16TNA-125:E TR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Micron

Model:

MT41K512M16TNA-125:E TR

Description:

IC DRAM 8GBIT PARALLEL 96FBGA

Stock:

18425

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

13.5 ns

Clock frequency

800 MHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Paralleling

Memory type

Volatile

Random read

Voltage - Supply

1.283V ~ 1.45V

packing

series

storage capacity

8Gb(512M x 16)

technology

DDR3L

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

96-TFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

MT41K512M16TNA-125:E TR（DDR3）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18425,Price reference "real-time change" China/Hongkong。 MT41K512M16TNA-125:E TR package/specs, Download MT41K512M16TNA-125:E TR、Datasheet。