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    K4A4G165WF-BCTD SSDPEKNU512GZ MT40A512M16LY-075:E
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    Home/    Category/    DDR3/    MT41K512M8V80AWC1

    IC DRAM 4GBIT PARALLEL DIE MT41K512M8V80AWC1

    MT41K512M8V80AWC1 image
    The pictures are for reference only
    Brand:
    Micron
    Model:
    MT41K512M8V80AWC1
    Description:
    IC DRAM 4GBIT PARALLEL DIE
    Stock:
    12965
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
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    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Access time
    -
  • Access time
    -
  • Clock frequency
    -
  • Current - maximum
    -
  • DWPD
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    1.283V ~ 1.45V
  • packing
    bulk
  • series
    -
  • storage capacity
    4Gb(512M x 8)
  • technology
    DDR3L
  • working temperature
    0°C ~ 95°C(TC)
  • Encapsulation/Housing
    -
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    -
  • Part status
    On sale
    • PDFicoDataSheet
    MT41K512M8V80AWC1（DDR3）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12965,Price reference "real-time change" China/Hongkong。 MT41K512M8V80AWC1 package/specs, Download MT41K512M8V80AWC1、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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