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IC DRAM 2GBIT PARALLEL DIE MT41K256M8V89CWC1

MT41K256M8V89CWC1 image
The pictures are for reference only
Brand:
Model:
MT41K256M8V89CWC1
Description:
IC DRAM 2GBIT PARALLEL DIE
Stock:
18738
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
Contact UsContact Us
座机icoTel :0755-82988826
手机icoPhone:+86 19166251823(Wechat)
QQicoQ  Q:3469113929
QQicoEmail:online1@ssf-asia.com
产品参数icoParameters
  • Access time
    -
  • Access time
    -
  • Clock frequency
    -
  • Current - maximum
    -
  • DWPD
    -
  • Flash architecture
    -
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Random read
    -
  • Voltage - Supply
    1.283V ~ 1.45V
  • packing
    bulk
  • series
    -
  • storage capacity
    2Gb(256M x 8)
  • technology
    DDR3L
  • working temperature
    0°C ~ 95°C(TC)
  • Encapsulation/Housing
    -
  • Country of origin
    China/USA/Japan, etc
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    -
  • Part status
    On sale
  • PDFicoDataSheet
    MT41K256M8V89CWC1(DDR3)ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18738,Price reference "real-time change" China/Hongkong。 MT41K256M8V89CWC1 package/specs, Download MT41K256M8V89CWC1、Datasheet。
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