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    Home/    Category/    DDR2/    IS43DR86400C-3DBI-TR

    IC DRAM 512MBIT PARALLEL 60TWBGA IS43DR86400C-3DBI-TR

    IS43DR86400C-3DBI-TR image
    The pictures are for reference only
    Brand:
    ISSI
    Model:
    IS43DR86400C-3DBI-TR
    Description:
    IC DRAM 512MBIT PARALLEL 60TWBGA
    Stock:
    14862
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
    QQicoQ  Q：3469113929
    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Access time
    450 ps
  • Clock frequency
    333 MHz
  • Memory format
    DRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    1.7V ~ 1.9V
  • Write cycle time - words, pages
    15ns
  • packing
    TR
  • series
    -
  • storage capacity
    512Mb(64M x 8)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    60-TFBGA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IS43DR86400C-3DBI-TR（DDR2）ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14862,Price reference "real-time change" China/Hongkong。 IS43DR86400C-3DBI-TR package/specs, Download IS43DR86400C-3DBI-TR、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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