MT44K16M36RB-125E:A TR parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Micron

Model:

MT44K16M36RB-125E:A TR

Description:

IC DRAM 576MBIT PARALLEL 168BGA

Stock:

13201

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

10 ns

Clock frequency

800 MHz

Current - maximum

DWPD

Flash architecture

Memory format

DRAM

Memory interface

Paralleling

Memory type

Volatile

Random read

Voltage - Supply

1.28V ~ 1.42V

packing

series

storage capacity

576Mb(16M x 36)

technology

RLDRAM 3

working temperature

0°C ~ 95°C(TC)

Encapsulation/Housing

168-TBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

MT44K16M36RB-125E:A TR（RLDRAM）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory13201,Price reference "real-time change" China/Hongkong。 MT44K16M36RB-125E:A TR package/specs, Download MT44K16M36RB-125E:A TR、Datasheet。