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IC SRAM 9MBIT PARALLEL 119PBGA IS61NLP25636A-200B2I-TR

IS61NLP25636A-200B2I-TR image
The pictures are for reference only
Brand:
Model:
IS61NLP25636A-200B2I-TR
Description:
IC SRAM 9MBIT PARALLEL 119PBGA
Stock:
3100
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
Contact UsContact Us
座机icoTel :0755-82988826
手机icoPhone:+86 19166251823(Wechat)
QQicoQ  Q:3469113929
QQicoEmail:online1@ssf-asia.com
产品参数icoParameters
  • Access time
    3.1 ns
  • Clock frequency
    200 MHz
  • Memory format
    SRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    3.135V ~ 3.465V
  • Write cycle time - words, pages
    -
  • packing
    TR
  • series
    -
  • storage capacity
    9Mb(256K x 36)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    119-BBGA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    IS61NLP25636A-200B2I-TR(SRAM)ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3100,Price reference "real-time change" China/Hongkong。 IS61NLP25636A-200B2I-TR package/specs, Download IS61NLP25636A-200B2I-TR、Datasheet。
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