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    Home/    Category/    SRAM/    IS61NLP25636A-200B2I-TR

    IC SRAM 9MBIT PARALLEL 119PBGA IS61NLP25636A-200B2I-TR

    IS61NLP25636A-200B2I-TR image
    The pictures are for reference only
    Brand:
    ISSI
    Model:
    IS61NLP25636A-200B2I-TR
    Description:
    IC SRAM 9MBIT PARALLEL 119PBGA
    Stock:
    3100
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
    QQicoQ  Q：3469113929
    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Access time
    3.1 ns
  • Clock frequency
    200 MHz
  • Memory format
    SRAM
  • Memory interface
    Paralleling
  • Memory type
    Volatile
  • Voltage - Supply
    3.135V ~ 3.465V
  • Write cycle time - words, pages
    -
  • packing
    TR
  • series
    -
  • storage capacity
    9Mb(256K x 36)
  • working temperature
    -40°C ~ 85°C(TA)
  • Encapsulation/Housing
    119-BBGA
  • Country of origin
    USA
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    IS61NLP25636A-200B2I-TR（SRAM）ByISSIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3100,Price reference "real-time change" China/Hongkong。 IS61NLP25636A-200B2I-TR package/specs, Download IS61NLP25636A-200B2I-TR、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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