IC SRAM 9MBIT PARALLEL 256FBGA CYD09S18V18-167BBXI
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Model:
CYD09S18V18-167BBXI
Description:
IC SRAM 9MBIT PARALLEL 256FBGA
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Parameters
1.42V ~ 1.58V,1.7V ~ 1.9V
Write cycle time - words, pages
DataSheet
CYD09S18V18-167BBXI(SRAM)ByCypressDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12637,Price reference "real-time change" China/Hongkong。 CYD09S18V18-167BBXI package/specs, Download CYD09S18V18-167BBXI、Datasheet。