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    Home/    Category/    FLASH/    W66BM6NBUAFI TR

    IC DRAM 2GBIT LVSTL 11 200WFBGA W66BM6NBUAFI TR

    W66BM6NBUAFI TR image
    The pictures are for reference only
    Brand:
    Winbond
    Model:
    W66BM6NBUAFI TR
    Description:
    IC DRAM 2GBIT LVSTL 11 200WFBGA
    Stock:
    7221
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
    座机icoTel ：0755-82988826
    手机icoPhone：+86 19166251823(Wechat)
    QQicoQ  Q：3469113929
    QQicoEmail：online1@ssf-asia.com
    产品参数icoParameters
  • Clock frequency
    1.6GHz
  • Memory interface
    LVSTL_11
  • Memory type
    Volatile
  • Voltage - Supply
    1.06V ~ 1.17V,1.7V ~ 1.95V
  • Write cycle time - words, pages
    18ns
  • packing
    CT
  • storage capacity
    2Gb(128M x 16)
  • technology
    SDRAM - Mobile LPDDR4X
  • working temperature
    -40°C ~ 95°C(TC)
  • Encapsulation/Housing
    200-WFBGA
  • Country of origin
    Taiwan
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
    • PDFicoDataSheet
    W66BM6NBUAFI TR（FLASH）ByWinbondDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7221,Price reference "real-time change" China/Hongkong。 W66BM6NBUAFI TR package/specs, Download W66BM6NBUAFI TR、Datasheet。
    ICQQG images/产品内页BANNER2-主营品牌英文.jpg
    ICQQG images/产品内页BANNER英文.jpg
    ICQQG images/c2fc46c3cfa96cda43d701b26ccc08fe.jpg
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