MT29RZ4B2DZZHGSK-18 W.80E TR parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ NAND FLASH/ MT29RZ4B2DZZHGSK-18 W.80E TR

The pictures are for reference only

Brand:

Micron

Model:

MT29RZ4B2DZZHGSK-18 W.80E TR

Description:

IC FLASH RAM 4GBIT PAR 162VFBGA

Stock:

18398

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Access time

Clock frequency

533 MHz

Memory format

FLASH,RAM

Memory interface

Paralleling

Memory type

nonvolatile

Voltage - Supply

1.8V

packing

series

storage capacity

4Gb(512M x 8)(NAND),2G(64M x 32)(LPDDR2)

working temperature

-25°C ~ 85°C(TA)

Encapsulation/Housing

162-VFBGA

Country of origin

China/USA/Japan, etc

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

Write cycle time - words, pages

DataSheet

SearchMT29RZ4B2DZZHGSK-18 W.80E TR

MT29RZ4B2DZZHGSK-18 W.80E TR（NAND FLASH）ByMicronDesign and production, ICQQG Electronic component purchase website provides sufficient inventory18398,Price reference "real-time change" China/Hongkong。 MT29RZ4B2DZZHGSK-18 W.80E TR package/specs, Download MT29RZ4B2DZZHGSK-18 W.80E TR、Datasheet。