Memory format | DRAM |
Installation type | Surface mount |
packing | TR |
series | - |
Part status | stop production |
Memory type | Volatile |
storage capacity | 4Gb(512M x 8) |
Voltage - Supply | 1.283V ~ 1.45V |
working temperature | 0°C ~ 95°C(TC) |
Memory interface | Paralleling |
Clock frequency | 667 MHz |
Access time | 20 ns |
Encapsulation/Housing | 78-TFBGA |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Write cycle time - words, pages | 15ns |