1N5811US/TR
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1N5811US/TR
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1N5811US/TR

Brand:Microchip
Model:1N5811US/TR
stock:65011
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price:1+
¥8.39
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series -
Part status On sale
Speed Rapid recovery=< 500ns,> 200mA(Io)
working temperature -
Encapsulation/Housing SQ-MELF,B
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
Supplier device packaging B,SQ-MELF
Diode type standard
Voltage DC reverse (Vr) (maximum) 150 V
Current average rectification (Io) 3A
Voltage at different If - forward (Vf) 875 mV @ 4 A
Reverse recovery time (trr) 30 ns
Current - reverse leakage at different Vr 5 µA @ 150 V
Capacitance at different Vr and F 60pF @ 10V,1MHz
Common problem
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