JAN1N5819-1/TR
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JAN1N5819-1/TR
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JAN1N5819-1/TR

Brand:Microchip
Model:JAN1N5819-1/TR
stock:52722
Store:ShenZhen/Hongkong
DataSheet: Search
Price:1+
¥9.56
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing TR
series Military, MIL-PRF-19500/586
Part status On sale
speed Rapid recovery=< 500ns,> 200mA(Io)
working temperature -
Encapsulation/Housing DO-204AL,DO-41,axial
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
Supplier device packaging DO-41
Diode type Schottky barrier
Voltage DC reverse (Vr) (maximum) 45 V
Current average rectification (Io) 1A
Voltage at different If - forward (Vf) 490 mV @ 1 A
Reverse recovery time (trr) -
Current - reverse leakage at different Vr 50 µA @ 45 V
Capacitance at different Vr and F -
Common problem
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