Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | Not applicable to new design |
speed | Rapid recovery=< 500ns,> 200mA(Io) |
working temperature | - |
Encapsulation/Housing | 2-XDFN |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Supplier device packaging | X3-WLB1006-2 |
Diode type | Schottky barrier |
Voltage DC reverse (Vr) (maximum) | 40 V |
Current average rectification (Io) | 1A |
Voltage at different If - forward (Vf) | 560 mV @ 1 A |
Reverse recovery time (trr) | - |
Current - reverse leakage at different Vr | 75 µA @ 40 V |
Capacitance at different Vr and F | 35pF @ 4V,1MHz |